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2SK3546J - Silicon N-Channel MOSFET

Key Features

  • s 0.27±0.02 (0.50)(0.50) 1.60+0.05.
  • 0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03.
  • 0.01 1.60±0.05 0.85+0.05.
  • 0.03 0 to 0.02 Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 125 125.
  • 55 to +125 Unit V 5˚ mA mA mW °C °C 1: Gate 2: Source 3: Drain SSMini3-F1 Package Marking Symbol: 5F.
  • Ele.

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Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching ■ Features 0.27±0.02 (0.50)(0.50) 1.60+0.05 –0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03 –0.01 1.60±0.05 0.85+0.05 –0.03 0 to 0.