2SK3546J Datasheet | Panasonic

Features 0.27±0.02 (0.50)(0.50) 1.60+0.05 - 0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03 - 0.01 1.60±0.05 0.85+0.05 - 0.03 0 to 0.02 Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 125 125 - 55 to +125 Unit V 5˚ m A m A m W °C °C 1: Gate 2: Source 3: Drain SSMini3-F1 Package Marking Symbol: 5F - Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 µA, VGS = 0 VDS = 50 V, VGS = 0 VGS = ±7 V, VDS = 0 ID = 1.0 µA, VDS = 3 V ID = 10 m A, VGS = 2.5 V ID = 10 m A, VGS = 4.0 V Forward transfer admittance Short-circuit forward transfer capacitance (mon source) Short-circuit output capacitance (mon source) Reverse transfer capacitance (mon source) Turn-on time - Turn-off time - Min 50 Typ Max Unit V µA µA V Ω m S p F p F p F ns ns 1.0 ±5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12 ID = 10 m A, VDS = 3 V, f = 1 k Hz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. - : ton, toff test circuit VOUT 470 Ω 90% 10% VIN VGS = 3.0 V VDD = 3 V VOUT 10% 50 Ω 90% 100 µF ton Publication date: July 2003 SJF00037AED toff 0.10 max. 0.70+0.05 - 0.03 - Absolute Maximum Ratings Ta = 25°C (0.80) - High-speed switching - Wide frequency...