Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature
VDSO VDGO IDSO IDGO IGSO
PD Topr Tstg
20 20 2 2 2 100.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Junction FETs (Small Signal)
2SK3426
Silicon N-Channel Junction
For impedance conversion in low frequency For electret capacitor microphone
I Features • High mutual conductance gm • Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature
VDSO VDGO IDSO IDGO IGSO
PD Topr Tstg
20 20 2 2 2 100 −20 to +80 −55 to +125
Unit V V mA mA mA
mW °C °C
0.33+–00..0025 3
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
0.15 min.
0.80±0.05 1.20±0.05
5˚
Unit: mm
0.10+–00..0025
0.15 min.
0 to 0.01 0.52±0.03
0.15 max.
2SK3426 Datasheet
