2SK3426
2SK3426 is Silicon Junction FETs manufactured by Panasonic.
Features
- High mutual conductance gm
- Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature
VDSO VDGO IDSO IDGO IGSO
PD Topr Tstg
20 20 2 2 2 100
- 20 to +80
- 55 to +125
Unit V V m A m A m A m W °C °C
0.33+- 00..0025 3
0.23+- 00..0025
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
0.15 min.
0.80±0.05 1.20±0.05
5˚
Unit: mm
0.10+- 00..0025
0.15 min.
0 to 0.01 0.52±0.03
0.15 max.
1: Drain 2: Source 3: Gate SSSMini3-F1 Package
Marking Symbol: 4E
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Drain current Mutual conductance Noise voltage Voltage gain
Voltage gain difference
Symbol
Conditions
Min Typ Max
- 1 VDS = 2.0 V, RD = 2.2 kΩ ± 1%
IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107
310 gm VD = 2.0 V, VGS = 0, f = 1 k...