2SK3582TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For ECM
- Application for Ultra-pact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
0.45 0.45
1.4±0.05
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range
Symbol VGDO IG PD Tj Tstg
Rating -20 10 100 125
- 55~125
Unit V m A °C °C
0.395±0.03 m W
0.9±0.1
Absolute Maximum Ratings (Ta=25°C)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual...
