Full PDF Text Transcription for 2SK3582TK (Reference)
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2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 ...
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ation for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA °C °C 0.395±0.03 mW 0.9±0.1 Absolute Maximum Ratings (Ta=25°C) 1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. opera
2SK3582TK Datasheet
