• Part: 2SK358
  • Description: N-Channel Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 131.87 KB
Download 2SK358 Datasheet PDF
Toshiba
2SK358
FEATURES . Low Drain-Source ON Resistance : RD g (qn) = 0- 7fi (Typ . . High Forward Transfer Admittance: l Yf s l=2.3S (Typ.) . High Drain Current : Idp=8A (Max.) . Low Leakage Current: IGSS =±100n A (Max.) @ VG s=±20V . Enhancement-Mode I DSS=lm A (Max.) @ V DS=250V : V t h=1.5~3.5V @ Io=lm A INDUSTRIAL APPLICATIONS Unit in mm 10l3MAX. 03.6±( MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC SYMBOL RATING UNIT 2.5 4 2.5 4 X < Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range VDSX vgss ID !d P PD Tch T stg ELECTRICAL CHARACTERISTICS (Ta=25 C) 250 ±20 40 150 -55-150 Ci tn 4=to " i ' 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE T0-220AB TOSHIBA 2-10A1C...