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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
2SK369
For Low Noise Audio Amplifier Applications
Unit: mm
· Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) · High breakdown voltage: VGDS = −40 V (min) · Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 Ω) · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-40 10 400 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.
2SK369 Datasheet
