2SK369 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for u

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2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi

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isc N-Channel MOSFET Transistor 2SK3694-01L FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source O

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isc N-Channel MOSFET Transistor 2SK3692-01 FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On

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2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching L

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2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi

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isc N-Channel MOSFET Transistor 2SK3694-01S FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source O

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2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 FUJI POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching No second

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2SK3693-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p

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2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching N

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isc N-Channel MOSFET Transistor 2SK3698-01 FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source O

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2SK3692-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series Features High speed switching L

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isc N-Channel MOSFET Transistor 2SK3699-01MR FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source

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www.DataSheet4U.com 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features H

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2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching

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2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi

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2SK3698-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series Features High speed switching L

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isc N-Channel MOSFET Transistor 2SK3694-01SJ FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source

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isc N-Channel MOSFET Transistor 2SK3693-01MR FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source

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2SK3695-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No second

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