TOSHIBA Field Effect Transistor Silicon N Channel .
2SK369 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for u.2SK3699-01MR - N-Channel Silicon Power MOSFET
www.DataSheet4U.com 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features H.K3699 - 2SK3699
2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching L.2SK3697-01 - N-CHANNEL SILICON POWER MOSFET
2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 FUJI POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching No second.2SK3692-01 - N-CHANNEL SILICON POWER MOSFET
2SK3692-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series Features High speed switching L.2SK3694-01L - N-CHANNEL SILICON POWER MOSFET
2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi.2SK3694-01SJ - N-CHANNEL SILICON POWER MOSFET
2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi.2SK3694-01SJ - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3694-01SJ FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source .2SK3694-01S - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3694-01S FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source O.2SK3693-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3693-01MR FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source .2SK3690-01 - N-CHANNEL SILICON POWER MOSFET
2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching N.2SK3691-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching .2SK3693-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3693-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p.2SK3694-01S - N-CHANNEL SILICON POWER MOSFET
2SK3694-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack 200305 Super FAP-G Series Features High speed switchi.2SK3695-01 - N-CHANNEL SILICON POWER MOSFET
2SK3695-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No second.2SK3696-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3696-01MR FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No seco.2SK3698-01 - N-CHANNEL SILICON POWER MOSFET
2SK3698-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series Features High speed switching L.2SK3698-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3698-01 FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source O.2SK3699-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3699-01MR FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source.2SK3694-01L - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3694-01L FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source O.