2SK3906
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
Switching Regulator Applications
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- - Small gate charge: Qg = 60 n C (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 20 80 150 792 20 15 150 -55 to 150 Unit V V V A W m J A m J °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
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