The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
2SK3905
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3905
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 17 68 150 816 17 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3.
2SK3905 Datasheet
