Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Switching Regulator Applications
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- - Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit:...
