• Part: 3SK260
  • Description: Silicon N Channel Dual Gate MOS Type FET
  • Manufacturer: Toshiba
  • Size: 193.75 KB
Download 3SK260 Datasheet PDF
Toshiba
3SK260
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm - High conversion gain: GCS = 24.5d B (typ.) - Low noise figure: NFCS = 3.3d B (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 100 125 -55~125 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.006 g (typ.) Characteristics Symbol Test Condition Gate 1 leakage current Gate 2 leakage current Drain-source voltage Drain current (Note) Gate 1-source cut-off voltage Gate 2-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Conversion gain Noise figure IG1SS IG2SS V (BR) DSX IDSS VG1S (OFF) VG2S...