GT25Q102 Description
GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage:.
- Part: GT25Q102
- Manufacturer: Toshiba (official site)
- Size: 152.55 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| GT25Q101 | Silicon N-Channel IGBT |
| GT25Q301 | Silicon N-Channel IGBT |
| GT25G101 | Silicon N-Channel IGBT |
| GT25G101SM | Silicon N-Channel IGBT |
| GT25G102 | Silicon N-Channel IGBT |