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GT25Q301 - Silicon N-Channel IGBT

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Part number GT25Q301
Manufacturer Toshiba
File Size 169.71 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT25Q301 Datasheet

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GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±20 25 50 25 50 200 150 −55 to 150 Unit V V A Diode forward current A JEDEC JEITA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range W °C °C TOSHIBA Weight: 9.75 g (typ.
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