GT25Q301 datasheet by Toshiba.
| Part number | GT25Q301 |
|---|---|
| Datasheet | GT25Q301_ToshibaSemiconductor.pdf |
| File Size | 169.71 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit:.
| Part Number | Description |
|---|---|
| GT25Q101 | Silicon N-Channel IGBT |
| GT25Q102 | Silicon N-Channel IGBT |
| GT25G101 | Silicon N-Channel IGBT |
| GT25G101SM | Silicon N-Channel IGBT |
| GT25G102 | Silicon N-Channel IGBT |
| GT25G102SM | Silicon N-Channel IGBT |
| GT25J101 | Silicon N-Channel IGBT |
| GT25J102 | Silicon N-Channel IGBT |
| GT20D101 | Silicon N-Channel Transistor |
| GT20D201 | Silicon P-Channel Transistor |
