GT60J322 Description
GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode Low saturation voltage:.
GT60J322 is Silicon N-Channel IGBT manufactured by Toshiba.
| Part Number | Description |
|---|---|
| GT60J323 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |
GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode Low saturation voltage:.