Datasheet Details
| Part number | GT60J322 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 275.49 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT60J322-ToshibaSemiconductor.pdf |
|
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Overview: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • Enhancement-mode Low saturation voltage: VCE (sat) = 1.
| Part number | GT60J322 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 275.49 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT60J322-ToshibaSemiconductor.pdf |
|
|
|
| Part Number | Description |
|---|---|
| GT60J323 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |
| GT60N321 | Silicon N-Channel IGBT |
| GT60N322 | Silicon N-Channel IGBT |