GT60J322 Datasheet | Toshiba

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications Unit: mm - - Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg  Rating 600 ±25 60 120 60 120 200 150 - 55~150 0.8 Unit V V A JEDEC W °C °C N m ― ― 2-21F2C JEITA TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 2002-01-18 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr 5Ω ton tf toff VF trr Rth (j-c) Rth (j-c) 15 V 0 - 15 V IF = 60 A, VGE = 0 IF = 60 A, VGE = 0, di/dt = - 100 A/µs   18 Ω Test Condition VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 60 m A, VCE = 5 V IC = 10 A, VGE = 15 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min   3.0    Typ.    0.95 1.25 13500 0.25 0.35 1.00 1.50 1.2 0.6   Max ±500 1.0 6.0 1.45 1.65  Unit n A m A V V p F    300 V        1.50 µs  1.6 1.0 0.625 0.96 V µs °C/W °C/W 2002-01-18 - VCE 100 mon emitter Tc = 25°C 80...