The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation Soft Switching Applications
Unit: mm
• •
Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 600 ±25 60 120 60 120 200 150 −55~150 0.8 Unit V V A
A
JEDEC
W °C °C N m
― ― 2-21F2C
JEITA TOSHIBA
Weight: 9.75 g (typ.
GT60J322 Datasheet
