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TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK15J50D
Switching Regulator Applications
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2 1.0 4.5 9.0 2.0
3.3 MAX.
2.0
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 15 60 210 360 15 21 150 −55 to 150 Unit
2.0 ± 0.3 1.0 ＋0.3 －0.25 5.45 ± 0.2 1.8 MAX. ＋0.3 0.6 －0.1 5.45 ± 0.2 4.8 MAX.
V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain (Heatsink) 3: Source
2.
K15J50D Datasheet
