Silicon N-Channel MOS Type Field Effect Transistor
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-100 10 150 125
-55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.
K368 Datasheet
