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K368-VB
K368-VB Datasheet
P-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.50 at VGS = - 10 V 0.56 at VGS = - 6.0 V
ID (A) - 1.5 - 1.4
Qg (Typ.) 7.7
TO-236 (SOT-23)
G1 S2
3D
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size
APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 100
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
- 1.65 - 1.55
- 1.5 - 1.4
Pulsed Drain Current
IDM
- 3.0
A
Continuous Source Current (Diode Conduction)a, b
IS
- 1.4
- 1.
K368 Datasheet
