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MT3S12FS - Silicon NPN Epitaxial Planar Type Transistor

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Part number MT3S12FS
Manufacturer Toshiba
File Size 141.68 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S12FS Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications MT3S12FS Unit : mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 • Superior performance in oscillator applications • Superior noise characteristics :NF = 1.7 dB, |S21e|2 = 4.5 dB (f =2GHz) 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 -0.04 0.48 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 13 6 1.5 40 10 85 125 −55~125 Unit V V V mA mW mW °C °C 0.1±0.05 1.BASE 2.EMITTER 3.
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