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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16T
VHF~UHF Band Oscillator and Amplifier Applications
• fT is high and current dependability is excellent. • The Cre curve is flat.
:|S21e|2 = 4.5 dB (@ 2 V, 10 mA, 1 GHz) :NF = 2.4 dB (@ 2 V, 10 mA, 1 GHz)
MT3S16T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 10 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 2 V
Collector current
IC 60 mA
Base current Collector power dissipation
IB 10 mW PC 100 mW
TESM
1.Base 2.Emitter 3.Collector
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g.
MT3S16T Datasheet
