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MT3S19 - Silicon NPN Epitaxial Planar Type Transistor

Features

  • Low-Noise Figure:NF=1.5 dB (typ. ) (@ f=1 GHz).
  • High Gain:|S21e|2=12.5 dB (typ. ) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1. Base 2. Emitter 3. Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59.

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Datasheet Details

Part number MT3S19
Manufacturer Toshiba
File Size 165.42 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S19 Datasheet

Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure:NF=1.5 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1. Base 2. Emitter 3. Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB Pc PC(Note 1) Tj Tstg 12 6 2 80 10 180 800 150 −55 to 150 V V V mA mA mW °C °C Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.
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