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MT3S19R - Silicon NPN Epitaxial Planar Type Transistor

Features

  • Low Noise Figure:NF=1.5dB(Typ. ) (@ f=1GHz).
  • High Gain:|S21e|2=13dB(Typ. ) (@ f=1GHz) Marking 3 1.8±0.1 0.05　M A 0.42+-00..0058 3 Unit: mm 0.17 +0.08 -0.07 2.4±0.1 1 0.95 2 0.95 2.9±0.2 A 0.8 -+00..0058 T6 12 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature r.

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Datasheet Details

Part number MT3S19R
Manufacturer Toshiba
File Size 155.69 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S19R Datasheet

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) Marking 3 1.8±0.1 0.05　M A 0.42+-00..0058 3 Unit: mm 0.17 +0.08 -0.07 2.4±0.1 1 0.95 2 0.95 2.9±0.2 A 0.8 -+00..0058 T6 12 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note1) Tj Tstg Rating 12 6 2 80 10 320 150 −55 to 150 Unit V V V mA mA mW °C °C SOT23F JEDEC JEITA TOSHIBA Weight: 11 mg (typ.
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