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SSM3K101TU - Silicon N Channel MOS Type High Speed Switching Applications

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Part number SSM3K101TU
Manufacturer Toshiba Semiconductor
File Size 177.79 KB
Description Silicon N Channel MOS Type High Speed Switching Applications
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www.DataSheet4U.com SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications • • 1.8V drive Low on-resistance: Ron = 230mΩ (max) (@VGS = 1.8 V) Ron = 138mΩ (max) (@VGS = 2.5 V) Ron = 103mΩ (max) (@VGS = 4.0 V) 0.65±0.05 1 2 3 0.166±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 12 2.2 4.4 800 500 150 −55~150 Unit V V A mW °C °C 2.0±0.1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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