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SSM3K107TU - Silicon N Channel MOS Type High-Speed Switching Applications

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Part number SSM3K107TU
Manufacturer Toshiba Semiconductor
File Size 187.78 KB
Description Silicon N Channel MOS Type High-Speed Switching Applications
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www.DataSheet4U.com SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications • • 4 V drive Low ON-resistance: Unit: mm Ron = 410 mΩ (max) (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 20 1.5 3.0 800 500 150 −55~150 Unit V V A mW °C °C 2.0±0.1 1 2 0.7±0.05 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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