Datasheet4U Logo Datasheet4U.com

SSM3K105TU - Silicon N Channel MOS Type High Speed Switching Applications

📥 Download Datasheet

Datasheet preview – SSM3K105TU

Datasheet Details

Part number SSM3K105TU
Manufacturer Toshiba Semiconductor
File Size 503.83 KB
Description Silicon N Channel MOS Type High Speed Switching Applications
Datasheet download datasheet SSM3K105TU Datasheet
Additional preview pages of the SSM3K105TU datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications • • 4V drive Low on-resistance: Unit: mm Ron = 480mΩ (max) (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 30 ± 20 2.1 4.2 800 500 150 −55~150 Unit V V 1 2 mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
Published: |