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SSM3K104TU - Silicon N-Channel MOSFET

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Part number SSM3K104TU
Manufacturer Toshiba Semiconductor
File Size 184.41 KB
Description Silicon N-Channel MOSFET
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SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ± 12 V ID 3.0 A IDP 6.0 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g.
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