Silicon N Channel MOS Type High-Speed Switching Applications
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SSM3K104TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K104TU
Power Management Switch Applications High-Speed Switching Applications
• 1.8 V drive • Low ON-resistance:
Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V)
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
20
V
VGSS
± 12
V
ID
3.0 A
IDP
6.0
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g.
SSM3K104TU Datasheet
