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SSM3K106TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K106TU
High-Speed Switching Applications
• 4 V drive • Low ON-resistance:
Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V)
Unit: mm 2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
20
V
VGSS
± 20
V
ID
1.2 A
IDP
2.4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3K106TU Datasheet
