Full PDF Text Transcription for SSM3K116TU (Reference)
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SSM3K116TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications • 2.5V drive • Low on-resistance: Ron = 135mΩ (max) (@V...
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g Applications • 2.5V drive • Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 30 V VGSS ± 12 V ID 2.2 A IDP 4.4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant cha
SSM3K116TU Datasheet
