SSM3K116TU Overview
SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications 2.5V drive Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V) Ratings (Ta = 25°C) Unit: Using continuously under heavy loads (e.g.