Full PDF Text Transcription for SSM3K119TU (Reference)
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SSM3K119TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Lo...
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itch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 30 V VGSS ± 12 V ID 2.5 A IDP 5.0 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant c
SSM3K119TU Datasheet
