SSM3K119TU
SSM3K119TU is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Power Management Switch Applications High Speed Switching Applications
- 1.8 V drive
- Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V)
Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain- source voltage Gate- source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VGSS
± 12
2.5 A
PD (Note 1)
800 m W
PD (Note 2)
Tch
°C
Tstg
- 55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015...
