SSM6K06FU Datasheet | Toshiba

.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications - - - Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 1.1 2.2 300 150 -55~150 Unit V V A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA ― ― 2-2J1D Note 1: Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm ´ 6) Figure...