SSM6K07FU Datasheet | Toshiba

.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DC-DC Converters High Speed Switching Applications - - - Small package Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) : Ron = 220 mΩ max (@VGS = 4 V) Low input capacitance : Ciss = 102 pF typ. : Crss = 22 pF typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 1.5 3.0 300 150 -55~150 Unit V V A Drain power dissipation Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2J1D Note 1: Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6...