SSM6K08FU Datasheet | Toshiba

.. CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching Applications - - - Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ±12 1.6 3.2 300 150 -55~150 Unit V V A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2J1D Note1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4...