SSM6K22FE
SSM6K22FE is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
High Current Switching Applications DC-DC Converter
Unit: mm
- Suitable for high-density mounting due to pact package
- Low on resistance:
RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
VGSS
±12
Drain current
Pulse
1.4 A
1,2,5,6 : Drain
: Gate
: Source
Power dissipation Channel temperature Storage temperature range
500 m W
(Note 1)
Tch
°C
Tstg
- 55 to 150
°C
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