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TC58DVM82A1FT00 - 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

General Description

e e h S a at .D w w

Key Features

  • w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 5.

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Datasheet Details

Part number TC58DVM82A1FT00
Manufacturer Toshiba
File Size 338.05 KB
Description 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM
Datasheet download datasheet TC58DVM82A1FT00 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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m o TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS .c U CMOS NAND E PROM 256-MBIT (32M × 8 BITS) 4 t DESCRIPTION e e h S a at .D w w FEATURES w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages).