TH50VSF2580AASB
Key Features
- Data retention supply voltage VCCs = 1.5 V~3.6 V
- Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)
- Block erase architecture for flash memory 8 blocks of 8 Kbytes 63 blocks of 64 Kbytes
- Organization
