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TH50VSF2580AASB - SRAM AND FLASH MEMORY MIXED MULTI-CHIP

Datasheet Summary

Description

The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V.

Features

  • Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www. DataSheet4U. comCCf.
  • Data retention supply voltage VCCs = 1.5 V~3.6 V.
  • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level).
  • Block erase architecture for flash memory 8 blocks of 8 Kbytes 63 blocks of 64 Kbytes.
  • Organization.
  • CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152.

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Datasheet Details

Part number TH50VSF2580AASB
Manufacturer Toshiba Semiconductor
File Size 609.49 KB
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP
Datasheet download datasheet TH50VSF2580AASB Datasheet
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TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V. The TH50VSF2580/2581AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications. FEATURES Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf • Data retention supply voltage VCCs = 1.5 V~3.
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