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TK17A65U - MOSFETs

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Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ. ) High forward transfer admittance: |Yfs| = 12.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulse.

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Datasheet Details

Part number TK17A65U
Manufacturer Toshiba Semiconductor
File Size 229.06 KB
Description MOSFETs
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TK17A65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
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