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TK17A65U - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(ON) = 0.20Ω (typ. ).
  • Low leakage current: IDSS = 100 µA (max) (VDS = 650 V).
  • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number TK17A65U
Manufacturer INCHANGE
File Size 248.24 KB
Description N-Channel MOSFET
Datasheet download datasheet TK17A65U Datasheet
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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK17A65U，ITK17A65U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.20Ω (typ.) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13.7 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 45 Tj Max.
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