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TK17A65W - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2013-07 2015-09-01 Rev.3.0 TK17A65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit.

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Datasheet Details

Part number TK17A65W
Manufacturer Toshiba Semiconductor
File Size 243.78 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (DTMOS) TK17A65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK17A65W TO-220SIS 1: Gate 2: Drain 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2013-07 2015-09-01 Rev.3.0 TK17A65W 4.
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