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TK40J20D Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (π-MOS) TK40J20D 1. Applications • Switching Voltage Regulators 2.

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.0374 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK40J20D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage Drain current (DC) Drain current (pulsed).

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