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TK4A65DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A65DA
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 3.5 14 35 205 3.5 3.5 150 −55 to 150 A W mJ A mJ °C °C Unit V V
2.54 0.64 ± 0.15
15.0 ± 0.3
• • • •
Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 1.9 S (typ.) Low leakage current: IDSS = 10 μA(max) (VDS = 650 V) Enhancement mode: Vth = 2.4 to 4.
TK4A65DA Datasheet
