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TK8P60W5 - Silicon N-Channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trr = 80 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ. ) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8P60W5 DPAK 1: Gate 2: Drain (Heat Sink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-08 2015-10-22 Rev.6.0 TK8P60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless oth.

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Datasheet Details

Part number TK8P60W5
Manufacturer Toshiba
File Size 287.67 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK8P60W5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK8P60W5 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features (1) Fast reverse recovery time: trr = 80 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8P60W5 DPAK 1: Gate 2: Drain (Heat Sink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-08 2015-10-22 Rev.6.0 TK8P60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 8.