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TK8S06K3L - Silicon N-channel MOSFET

Datasheet Summary

Features

  • (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.4.0 TK8S06K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltag.

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Datasheet Details

Part number TK8S06K3L
Manufacturer Toshiba Semiconductor
File Size 239.78 KB
Description Silicon N-channel MOSFET
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TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.4.0 TK8S06K3L 4.
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