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TPC6101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6101
Notebook PC Applications Portable Equipment Applications
· · · · Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.5 to −1.
TPC6101 Datasheet
