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TPC6103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) • Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(t = 5 s) (Note 2a)
Drain power dissipation
(t = 5 s) (Note 2b)
Single pulse avalanche energy (Note 3)
VDSS VDGR VGSS
ID IDP PD
PD
EAS
−12
V
−12
V
±8
V
−5.5 A
−22
2.
TPC6103 Datasheet
