The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC6105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6105
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode : Vth = −0.5 to −1.
TPC6105 Datasheet
