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TPC8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8201
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm
: IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.
TPC8201 Datasheet
