Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U- MOSII)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain- source ON resistance Low leakage current Enhancement- mode : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.) : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 30 30 ±20 6...