Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
Switching Regulator Applications Motor Drive Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 8.1 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 44 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.5±0.1 1.27 8
0.4±0.1 5
0.05 M A
6 .0 ± 0 .3 5 .0 ± 0 .2
0.15±0.05
0.95±0.05
5 .0 ± 0 .2
A...