TPCF8101 Overview
.. TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Unit: mm