Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Notebook PC Applications Portable Equipment Applications
- -
- - Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 12 V) Enhancement model: Vth =
- 0.5 to
- 1.2 V (VDS =
- 10 V, ID =
- 200 μA) Unit:...