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TPCF8101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8101
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −12 −12 ±8 −6 −24 2.5 0.7 6.3 −3 0.
TPCF8101 Datasheet
