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TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode : Vth = −0.5 to −1.
TPCF8102 Datasheet
