Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Notebook PC Applications Portable Equipment Applications
Unit: mm
- Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 14 S (typ.)
- Low leakage current : IDSS =
- 10 μA (max) (VDS =
- 20 V)
- Enhancement mode : Vth =
- 0.5 to
- 1.2 V
(VDS =
- 10 V, ID =
- 200...