TPCF8107 - MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCF8107
Manufacturer	Toshiba Semiconductor
File Size	227.69 KB
Description	MOSFET
Datasheet	TPCF8107 Datasheet
Additional preview pages of the TPCF8107 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curre.

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Published: Aug 27, 2014 |