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TPCF8107
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8107
1. Applications
• • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain
VS-8
4.
TPCF8107 Datasheet
