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TPCF8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8301
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±8 −2.7 −10.8 1.35 1.12 W 0.53 0.33 1.2 −1.35 0.
TPCF8301 Datasheet
